DocumentCode :
3499586
Title :
A graphene FET gas sensor gated by ionic liquid
Author :
Inaba, A. ; Yoo, Gwangwe ; Takei, Y. ; Matsumoto, Kaname ; Shimoyama, Isao
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
969
Lastpage :
972
Abstract :
We report a gas sensor based on a field-effect transistor (FET) with a graphene channel and ionic liquid (IL) gate. Graphene is supremely sensitive to its surroundings. Owing to the ~1-nm-thick electric double layer, ILs enable low-voltage operation of the FET. In addition, their solubility selectivity for different gases are controllable. Therefore, the proposed sensor selectively detects low concentration gases at low gate voltage. We fabricated the IL-gate FET using graphene grown by chemical vapor deposition. The current-voltage characteristic of the graphene-FET changed in proportion to logarithm of gas concentration. We demonstrated that our device was able to detect at least 30 ppm of ammonia (NH3) and 4000 ppm of carbon dioxide (CO2) at gate voltage below 1 V. The difference between the current-voltage response to NH3 and CO2 indicates the potential for selective gas measurement.
Keywords :
ammonia; carbon compounds; chemical vapour deposition; field effect transistors; gas sensors; graphene; CO2; CVD; IL gate; NH3; chemical vapor deposition; current-voltage response; electric double layer; field-effect transistor; gas concentration; gate voltage; graphene FET gas sensor; graphene channel; ionic liquid; low-voltage operation; selective gas measurement; size 1 nm; solubility selectivity; Current measurement; Field effect transistors; Gas detectors; Graphene; Liquids; Logic gates; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474408
Filename :
6474408
Link To Document :
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