Title :
On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology
Author :
Zhao, J. ; Li, G.P. ; Liao, K.Y. ; Chin, M.R. ; Sun, J.Y.-C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
Abstract :
Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show that the 1/f noise of base current is proportional to Ib2, and the 1/f noise from majority carrier transport through polysilicon grain boundaries is a primary source of 1/f noise.
Keywords :
BiCMOS integrated circuits; bipolar transistors; grain boundaries; integrated circuit technology; random noise; semiconductor device noise; C-BiCMOS technology; base current 1/f noise; bipolar transistor; grain boundaries; interfacial layer properties; majority carrier transport; polycrystalline Si emitter pnp transistor; reverse breakdown stress; semiconductors; via forward current stress; Aircraft propulsion; Bipolar transistors; Cleaning; Electric breakdown; Grain boundaries; Low-frequency noise; Noise generators; Semiconductor device noise; Stress; Sun;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263668
