High reliability of GaInP/GaInAs 980-nm window laser

Author

Ikoma, Norikazu ; Hashimoto, Jun ; Murata, Masayuki ; Katsuyama, Tomokazu ; Yoshida, Isao

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

1998

fDate

3-8 May 1998

Firstpage

12

Lastpage

13

Abstract

Summary form only given. We fabricated a GaInP-GaInAs 980-nm window laser using selective nitrogen ion implantation and subsequent anneal process. The results of the aging test of the lasers indicate very high reliability of 600000 h median life under 150-mW operation at 250C.

Keywords

III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion implantation; laser reliability; laser transitions; life testing; optical fabrication; quantum well lasers; semiconductor device testing; 150 mW; 25 C; 600000 h; 980 nm; GaInP-GaInAs; GaInP-GaInAs 980-nm window laser; GaInP/GaInAs 980-nm window laser; aging test; anneal process; high reliability; mW operation; median life; selective nitrogen ion implantation; Apertures; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Laser modes; Laser theory; Power generation; Space vector pulse width modulation; Stimulated emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675797

Filename

675797