Title :
High reliability of GaInP/GaInAs 980-nm window laser
Author :
Ikoma, Norikazu ; Hashimoto, Jun ; Murata, Masayuki ; Katsuyama, Tomokazu ; Yoshida, Isao
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
Summary form only given. We fabricated a GaInP-GaInAs 980-nm window laser using selective nitrogen ion implantation and subsequent anneal process. The results of the aging test of the lasers indicate very high reliability of 600000 h median life under 150-mW operation at 250C.
Keywords :
III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion implantation; laser reliability; laser transitions; life testing; optical fabrication; quantum well lasers; semiconductor device testing; 150 mW; 25 C; 600000 h; 980 nm; GaInP-GaInAs; GaInP-GaInAs 980-nm window laser; GaInP/GaInAs 980-nm window laser; aging test; anneal process; high reliability; mW operation; median life; selective nitrogen ion implantation; Apertures; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Laser modes; Laser theory; Power generation; Space vector pulse width modulation; Stimulated emission; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675797
