Title :
Effect of narrow-emitter on impurity distribution in polysilicon bipolar transistors
Author_Institution :
Adv. Technol. Devel., Philips Semiconductors, Sunnyvale, CA, USA
Abstract :
A narrow-emitter effect in submicrometer, single-polysilicon emitter BJTs is investigated. The effect is a result of the two dimensional diffusion of the impurity atoms that are redistributed in the polysilicon during thermal cycles. This effect results in geometry scaling-dependent doping profiles in the emitter and base regions, and is more significant for submicrometer and deep-submicrometer BJTs. Electrical measurements and two-dimensional process simulations were performed to demonstrate this effect.
Keywords :
BiCMOS integrated circuits; VLSI; bipolar transistors; doping profiles; elemental semiconductors; impurity distribution; silicon; BiCMOS technology; SUPREM 4; VLSI circuits; bipolar transistors; deep-submicrometer BJTs; geometry scaling-dependent doping profiles; impurity atoms two dimensional diffusion; impurity distribution effect; polycrystalline Si emitter; semiconductor; submicrometer BJT; thermal cycles; two-dimensional process simulations; Bipolar transistors; Breakdown voltage; Capacitance; Capacitance-voltage characteristics; Doping profiles; Electric variables measurement; Performance evaluation; Semiconductor impurities; Silicon; Surfaces;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263669
