DocumentCode :
3499641
Title :
Multi-zone model for the transient enhanced diffusion of ion implanted impurities in silicon during rapid thermal annealing
Author :
Huang, T.H. ; Kinoshita, H. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear :
1993
fDate :
1993
Firstpage :
315
Lastpage :
319
Abstract :
A diffusion model for ion-implanted BF2+ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dopant diffusion. In addition, a simple, accurate and universal precipitation model has been developed for high dose implantation. Simulation results show excellent agreement with the experimental results.
Keywords :
boron compounds; diffusion in solids; elemental semiconductors; ion implantation; precipitation; rapid thermal processing; semiconductor process modelling; silicon; RTA; Si:BF2; VLSI device design; defect evolution effect; diffusion model; dopant diffusion; ion implanted impurities; precipitation model; rapid thermal annealing; semiconductor; transient enhanced diffusion; Amorphous materials; Implants; Impurities; Ion implantation; Rapid thermal annealing; Semiconductor process modeling; Silicon; Substrates; Tail; Thermal engineering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-0978-2
Type :
conf
DOI :
10.1109/VTSA.1993.263670
Filename :
263670
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3499641
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