Title :
Compact Modeling of GaAs Heterojunction Bipolar Transistors using the new Mextram 3500 model
Author :
van der Toorn, Ramses ; Paasschens, J.C.J. ; Dohmen, J.J. ; Pijper, R.M.T. ; Balm, B.N.
Author_Institution :
Philips Res., Eindhoven
Abstract :
We adapt the Mextram 504 compact model for Si and SiGe bipolar transistors to make it suitable for compact modeling of GaAs HBT´s. We discuss the different physics included in the new model, Mextram 3500, and demonstrate the capabilities of the new model on GaAs HBT characteristic simulations. We also show an example of advanced GaAs PA-circuit simulations that have been performed with our model
Keywords :
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; silicon; GaAs; GaAs HBT; GaAs heterojunction bipolar transistor model; Mextram 3500 model; Mextram 504 compact model; Si bipolar transistors; SiGe; SiGe bipolar transistors; semiconductor device model; Bipolar transistors; Capacitance; Circuit simulation; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Physics; Power system modeling; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311123
