Title :
A 0.13μm thin SOI CMOS technology with low-cost SiGe:C HBTs and complementary high-voltage LDMOS
Author :
Boissonnet, L. ; Judong, F. ; Vandelle, B. ; Rubaldo, L. ; Bouillon, P. ; Dutartre, D. ; Perrotin, A. ; Avenier, G. ; Chevalier, P. ; Chantre, A. ; Rauber, B.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
We demonstrate the integration, in 0.13μm thin SOI CMOS technology, of low-cost high-performance high-voltage LDMOS and HBT transistors. These specific devices are obtained, without affecting CMOS core process devices. Static and dynamic characteristics for both type of transistors are presented, showing state of the art devices suitable for RF/analog/digital system on chip integration.
Keywords :
CMOS integrated circuits; Ge-Si alloys; bipolar transistor circuits; silicon-on-insulator; 0.13 micron; SOI CMOS technology; SiGe; SiGe:C HBT; complementary high-voltage LDMOS; dynamic characteristics; static characteristics; Bipolar transistors; CMOS digital integrated circuits; CMOS process; CMOS technology; Epitaxial growth; Etching; Fabrication; Heterojunction bipolar transistors; Radio frequency; Substrates; 130nm; High-voltage MOS; SOI; analog/RF; bipolar transistors; heterojunction; process integration;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311124
