Title :
Impact of Collector-Base Space Charge Region on RF Noise in Bipolar Transistors
Author :
Xia, Kejun ; Niu, Guofu
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL
Abstract :
This paper examines the impact of collector-base space charge region (CB SCR) on RF noise in scaled bipolar transistors by solving the Langevin equation of electron noise transport. The van Vliet model, which was derived for intrinsic base only, was evaluated for scaled bipolar transistors in which CB SCR transit time is most significant. An improved noise model accounting for CB SCR effects is derived
Keywords :
bipolar transistors; semiconductor device models; semiconductor device noise; space charge; CB SCR effects; CB SCR transit time; Langevin equation; RF noise; bipolar transistors; collector-base space charge region; electron noise transport; semiconductor device model; semiconductor device noise; van Vliet model; Bipolar transistors; Boundary conditions; Electrons; Equations; Integrated circuit modeling; Integrated circuit noise; Low-frequency noise; Radio frequency; Space charge; Thyristors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311126
