Title :
730-nm emitting compressively strained InGaAsP quantum well cw diode lasers
Author :
Al-Muhanna, A. ; Wade, J.K. ; Mawst, L.J. ; Fu, R.J.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Abstract :
Summary form only given. The use of an InGaAsP quantum well (QW) active region offers the intriguing possibility of realizing reliable high-power operation at short wavelengths (730 nm). We employ high bandgap cladding layers and confining layers to suppress carrier leakage along with a 1.5% compressively strained InGaAsP QW. The structure was grown on [100] substrates misoriented 10 toward (111) A by low-pressure metal-organic chemical-vapor deposition (LPMOCVD).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 730 nm; InGaAsP; InGaAsP quantum well active region; MOCVD; [100] substrates; carrier leakage suppression; compressively strained InGaAsP QW; compressively strained InGaAsP quantum well cw diode lasers; confining layers; high bandgap cladding layers; low-pressure metal-organic chemical-vapor deposition; reliable high-power operation; short wavelengths; Aging; Annealing; Diode lasers; Indium gallium arsenide; Ion implantation; Life estimation; Life testing; Photoluminescence; Quantum well lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675798
