Title :
The model of the p-n junction depletion region v-i characteristic considering the dependence of concentration of majority carriers on voltage
Author_Institution :
Fac. of Electron., Vilnius Gediminas Tech. Univ.
Abstract :
The equation of the p-n junction depletion region v-i characteristic considering the dependence of concentration of majority carriers on voltage is proposed and examined. The analysis of equation leads to the new conclusions about the behaviour of the junction, which in the general case contradict the propositions presented in a good many of books dedicated to semiconductor devices
Keywords :
p-n heterojunctions; p-n junction depletion region; semiconductor devices; Books; Charge carrier processes; Current density; Electronic mail; Equations; Lead compounds; Neodymium; P-n junctions; Semiconductor devices; Voltage;
Conference_Titel :
Baltic Electronics Conference, 2006 International
Conference_Location :
Tallinn
Print_ISBN :
1-4244-0414-2
Electronic_ISBN :
1736-3705
DOI :
10.1109/BEC.2006.311056
