Title :
Study of signal programming to improve EEPROM cell reliability
Author :
Canet, P. ; Bouchakour, R. ; Harabech, N. ; Boivin, Ph ; Mirabel, J.M. ; Plossu, C.
Author_Institution :
Lab. Maeriaux et Microelectronique de Provence, Inst. Charles Fabry, Marseille, France
Abstract :
This paper presents a study of EEPROM cell programming in order to increase the reliability of the device. Simulations show that it is possible to decrease the electric field across the tunnel oxide with a new programming signal. We obtain the same injected charge without any change in the device. This study allows us to improve the endurance of the memory cell
Keywords :
EPROM; PLD programming; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; tunnelling; EEPROM cell programming; EEPROM cell reliability; cell electrical behavior; compact model; electric field; endurance test; injected charge; linear current model; long-term reliability; memory cell endurance improvement; programming signal; reliability; signal programming; tunnel oxide; Analytical models; Circuit simulation; Degradation; EPROM; MOSFET circuits; Nonvolatile memory; PROM; Shape; Threshold voltage; Writing;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.951417
