Title :
Static and dynamic behavior of the SiC complementary JBS structures
Author :
Kurel, Raido ; Rang, Toomas
Author_Institution :
Dept. of Electron., TTU, Tallinn
Abstract :
This paper presents results of simulation of SiC based complementary JBS devices. The inner processes of JBS have been investigated to get better understanding of the main parameters inside the JBS device, which have most important influence on electrical characteristics of the device and which can not be measured by traditional techniques. The best complementary solutions of JBS devices for power application are found in means of device crystal poly type (4H- versus 6H-SiC), and of Schottky contact metal work function values
Keywords :
semiconductor devices; silicon compounds; wide band gap semiconductors; Schottky contact metal work function values; SiC; complementary JBS structures; electrical characteristics; power application; Charge carrier processes; Charge carriers; Doping; Electric variables; Electric variables measurement; Maxwell equations; Poisson equations; Schottky barriers; Silicon carbide; Voltage;
Conference_Titel :
Baltic Electronics Conference, 2006 International
Conference_Location :
Tallinn
Print_ISBN :
1-4244-0414-2
Electronic_ISBN :
1736-3705
DOI :
10.1109/BEC.2006.311060
