DocumentCode
3500033
Title
Partnering works: a case in point (sputtering process)
Author
Actor, G. ; Fair, J. ; McFarland, R. ; Patterson, P. ; Voiss, S. ; Schlueter, J. ; Schutz, R. ; Wang, S.-Q.
Author_Institution
Varian Assoc., Palo Alto, CA, USA
fYear
1993
fDate
1993
Firstpage
74
Lastpage
78
Abstract
Discusses a manufacturable process for sputter-depositing collimated Ti/TiN films. Prior to the project, the applicability of this technology to deep submicron geometries was postulated but unproven. The collimated sputtering process was characterized and optimized by using design of experiments. The step coverage, thickness uniformity, material properties, electrical resistivity, defect density and cost of ownership were studied. The manufacturability of the collimated deposition tool was proven with a controlled ´Marathon´. In addition to these specific project-related accomplishments, standard methods of reporting film resistivity were addressed.
Keywords
metallisation; semiconductor technology; sputter deposition; sputtered coatings; titanium; titanium compounds; Ti-TiN collimated films; collimated sputtering process; cost of ownership; deep submicron geometries; defect density; electrical resistivity; film resistivity; material properties; sputter-depositing; step coverage; thickness uniformity; Collimators; Conductivity; Costs; Design optimization; Electric resistance; Geometry; Manufacturing processes; Material properties; Sputtering; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Science Symposium, 1993. ISMSS 1993., IEEE/SEMI International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-1212-0
Type
conf
DOI
10.1109/ISMSS.1993.263696
Filename
263696
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