• DocumentCode
    3500033
  • Title

    Partnering works: a case in point (sputtering process)

  • Author

    Actor, G. ; Fair, J. ; McFarland, R. ; Patterson, P. ; Voiss, S. ; Schlueter, J. ; Schutz, R. ; Wang, S.-Q.

  • Author_Institution
    Varian Assoc., Palo Alto, CA, USA
  • fYear
    1993
  • fDate
    1993
  • Firstpage
    74
  • Lastpage
    78
  • Abstract
    Discusses a manufacturable process for sputter-depositing collimated Ti/TiN films. Prior to the project, the applicability of this technology to deep submicron geometries was postulated but unproven. The collimated sputtering process was characterized and optimized by using design of experiments. The step coverage, thickness uniformity, material properties, electrical resistivity, defect density and cost of ownership were studied. The manufacturability of the collimated deposition tool was proven with a controlled ´Marathon´. In addition to these specific project-related accomplishments, standard methods of reporting film resistivity were addressed.
  • Keywords
    metallisation; semiconductor technology; sputter deposition; sputtered coatings; titanium; titanium compounds; Ti-TiN collimated films; collimated sputtering process; cost of ownership; deep submicron geometries; defect density; electrical resistivity; film resistivity; material properties; sputter-depositing; step coverage; thickness uniformity; Collimators; Conductivity; Costs; Design optimization; Electric resistance; Geometry; Manufacturing processes; Material properties; Sputtering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Science Symposium, 1993. ISMSS 1993., IEEE/SEMI International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-1212-0
  • Type

    conf

  • DOI
    10.1109/ISMSS.1993.263696
  • Filename
    263696