Title :
Partnering works: a case in point (sputtering process)
Author :
Actor, G. ; Fair, J. ; McFarland, R. ; Patterson, P. ; Voiss, S. ; Schlueter, J. ; Schutz, R. ; Wang, S.-Q.
Author_Institution :
Varian Assoc., Palo Alto, CA, USA
Abstract :
Discusses a manufacturable process for sputter-depositing collimated Ti/TiN films. Prior to the project, the applicability of this technology to deep submicron geometries was postulated but unproven. The collimated sputtering process was characterized and optimized by using design of experiments. The step coverage, thickness uniformity, material properties, electrical resistivity, defect density and cost of ownership were studied. The manufacturability of the collimated deposition tool was proven with a controlled ´Marathon´. In addition to these specific project-related accomplishments, standard methods of reporting film resistivity were addressed.
Keywords :
metallisation; semiconductor technology; sputter deposition; sputtered coatings; titanium; titanium compounds; Ti-TiN collimated films; collimated sputtering process; cost of ownership; deep submicron geometries; defect density; electrical resistivity; film resistivity; material properties; sputter-depositing; step coverage; thickness uniformity; Collimators; Conductivity; Costs; Design optimization; Electric resistance; Geometry; Manufacturing processes; Material properties; Sputtering; Tin;
Conference_Titel :
Semiconductor Manufacturing Science Symposium, 1993. ISMSS 1993., IEEE/SEMI International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-1212-0
DOI :
10.1109/ISMSS.1993.263696
