Title :
The substrate doping density effect on submicron MOSFET´s characteristics
Author :
Saha, Babul K. ; Shaari, S.B.H. ; Majlis, B.Y.
Author_Institution :
Semicond. Technol. Center, Taman Technol. Malaysia, Malaysia
Abstract :
The effect of substrate doping density on the electrical behaviors of submicron n-MOSFET has been studied analytically. A previously developed analytical submicron MOSFET model has been used in this work. The model has been simulated for different characteristics with substrate doping density as only variable input parameter. From the simulation results, the trends of variation of different characteristics with the variation of the substrate doping density is studied and the higher doping density is found to be reliable for the submicron MOSFET operation
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; substrates; MOSFET model; NMOSFET; electrical behavior; n-MOSFET; submicron MOSFET characteristics; substrate doping density effect; Analytical models; Circuit synthesis; Integrated circuit reliability; Integrated circuit technology; MOSFET circuits; Semiconductor device doping; Semiconductor process modeling; Substrates; Ultra large scale integration; Very large scale integration;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616502
