Title :
Current sensivity of Si mosfet to terahertz irradiation
Author :
But, D.B. ; Golenkov, O.G.
Author_Institution :
Lashkariev Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
Abstract :
There is an increased interest in the use of terahertz (THz) radiation (frequency range 0.1-10 THz) for various applications in the fields of security screening, medicine, radio astronomy, etc. Nowadays main concepts of THz radiation detection are well-studied which allowed to create such types of THz receivers as low temperature quasiparticle detectors, Schottky diodes, micro-bolometers, MOSFET and HEMT-detectors, etc.
Keywords :
MOSFET; terahertz waves; Si MOSFET; THz radiation detection; THz receiver; current sensivity; frequency 0.1 THz to 10 THz; terahertz irradiation;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4244-7900-9
DOI :
10.1109/MSMW.2010.5546073
