DocumentCode :
3500670
Title :
Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
Author :
Liu, Bin ; Yang, Mingchu ; Zhan, Chunlei ; Yang, Yue ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed.
Keywords :
field effect transistors; graphene; BTI characteristics; G-FET; bias temperature instability; graphene field-effect transistor; graphene transfer-free process; plausible graphene BTI mechanism; Aluminum oxide; Logic gates; Nickel; Silicon; Stress; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872215
Filename :
5872215
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3500670
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