Title :
Microwave Tunneling Structures Rased On 2-Dimensional-Electron-Gas Devices
Author :
Hartnagel, Eng H L
Author_Institution :
Institut fur Hochfrequenztechnik
Keywords :
Capacitance; Diodes; Doping; Equivalent circuits; Frequency; Heterojunctions; Impedance; Joining processes; Microwave devices; Tunneling;
Conference_Titel :
Microwave Conference/Brazil, 1993., SBMO International
Print_ISBN :
0-7803-1288-0
DOI :
10.1109/SBMO.1993.587222
