Title :
Variability and feasibility of CVD graphene interconnect
Author :
Kang, C.G. ; Lee, S.K. ; Lee, Y.G. ; Hwang, H.J. ; Cho, C.H. ; Heo, J.S. ; Chung, H.J. ; Yang, H.J. ; Seo, S.E. ; Lee, B.H.
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
Graphene and its derivatives (graphite, CNT) have very high conductivity and critical current density higher than 108 A/cm2, which can be utilized in interconnect applications. Theoretically, a doped graphene is predicted to have better performance than Cu as an interconnect conductor. However, the feasibility of graphene interconnect has not been experimentally examined systematically. In this paper, the critical current density of single layer and multilayer graphene are studied to provide insights about the feasibility of graphene interconnect technology.
Keywords :
chemical vapour deposition; graphene; integrated circuit interconnections; multilayers; C; CVD graphene interconnect; critical current density; graphene interconnect technology; multilayer graphene; single layer graphene; Conductivity; Copper; Critical current density; Electric breakdown; Logic gates; Materials; Resistance;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872224