DocumentCode :
3501074
Title :
Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack
Author :
Gyanathan, Ashvini ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report a novel multi-level phase change random access memory (PCRAM) cell with a graded Ge2Sb2Te5 (GST) structure which enables multi-bit, high density storage. This work delves into the mechanism of the multilevel switching behaviour with both electrical as well as thermal analyses.
Keywords :
germanium compounds; phase change memories; tantalum compounds; Ge2Sb2Te5; Ge2Sb2Te5 stack; Ta2O5; Ta2O5 barrier layer; level phase change random access memory; multi-bit high density storage; multi-level PCRAM cell; Nonvolatile memory; Phase change materials; Phase change random access memory; Resistance; Silicon; Switching circuits; Thermal analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872233
Filename :
5872233
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3501074
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