• DocumentCode
    3501105
  • Title

    Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

  • Author

    Prakash, A. ; Maikap, S. ; Chen, G. ; Chen, F. ; Kao, M.-J. ; Tsai, M.-J.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ. CGU, Taoyuan, Taiwan
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Improved resistive switching memory characteristics in a W/Ti/Ta2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O5 film with a thickness of ~7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of ~2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention at 85°C.
  • Keywords
    high-k dielectric thin films; random-access storage; tantalum compounds; titanium; transmission electron microscopy; tungsten; TEM image; Ti interfacial layer; W-Ti-Ta2O5-W; amorphous film; bipolar memory; high-κ Ta<;sub>;2<;/sub>;O<;sub>;5<;/sub>;-based resistive switching memory; memory device; Electrodes; Magnetic resonance imaging; Magnetic tunneling; Metals; Resistance; Sensors; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872235
  • Filename
    5872235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3501105