Title :
Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer
Author :
Prakash, A. ; Maikap, S. ; Chen, G. ; Chen, F. ; Kao, M.-J. ; Tsai, M.-J.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ. CGU, Taoyuan, Taiwan
Abstract :
Improved resistive switching memory characteristics in a W/Ti/Ta2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O5 film with a thickness of ~7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of ~2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention at 85°C.
Keywords :
high-k dielectric thin films; random-access storage; tantalum compounds; titanium; transmission electron microscopy; tungsten; TEM image; Ti interfacial layer; W-Ti-Ta2O5-W; amorphous film; bipolar memory; high-κ Ta<;sub>;2<;/sub>;O<;sub>;5<;/sub>;-based resistive switching memory; memory device; Electrodes; Magnetic resonance imaging; Magnetic tunneling; Metals; Resistance; Sensors; Switches;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872235
