Simulation and modeling of wafer level silicon-base spiral inductor

With the development of radio frequency wireless communication technology, there are strong demands of spiral inductor with high performance and low profile. The inductor is a basic component of IPD (Integrated Passive Devices [1]) including oscillators, filters, mixers and baluns. In this paper, the structure and process of fabricating a high performance wafer level silicon-base spiral inductor was presented and the effects of geometrical parameters on the inductance and quality factor were studied via a commercial 3-D EM [2] (Electromagnetic) simulator software. The performance was compared with the traditional on-chip embedded inductors. The results show that the number of turns and inner radius significantly impact the inductance and the performance of the mentioned spiral inductor is better than the traditional on-chip embedded inductors.