Title :
New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
Author :
Koh, Shao-Ming ; Kong, Eugene Yu Jin ; Liu, Bin ; Ng, Chee-Mang ; Liu, Pan ; Mo, Zhi-Qiang ; Leong, Kam-Chew ; Samudra, Ganesh S. ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the demonstration of a new contact resistance reduction technology for Si:C S/D using Tellurium (Te) implant and segregation. When integrated in a novel process flow featuring a single-metal platinum-based silicide (PtSi) contact technology, independent control of SBH in n- and p-FinFETs can be achieved. A low electron SBH of 120 meV is attained for n-FinFETs with Si:C S/D using PtSi and Te segregation, giving an IDsat enhancement of 22% in comparison with controls without Te implant.
Keywords :
MOSFET; carbon; contact resistance; elemental semiconductors; ion implantation; platinum compounds; silicon; tellurium; PtSi:Te; Si:C; contact resistance reduction; independent contact resistance optimization; low electron SBH; n-FinFET; p-FinFET; single metallic silicide technology; single-metal platinum-based silicide contact technology; tellurium implant; FinFETs; Implants; Logic gates; Metals; Silicidation; Silicides; Silicon;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872238
