DocumentCode :
3501156
Title :
High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2
Author :
Loh, W.-Y. ; Yang, Y.R. ; Hung, P.Y. ; Sassman, B. ; Kenney, C. ; Bersuker, G. ; Majhi, P. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
A novel high temperature silicide process using millisecond anneal is reported. Superior thermal stability, film properties (Rs, surface roughness) and low contact resistivity to n+ silicon of <; 1 Ωμm2 is demonstrated with milli-second silicide anneal which results in grain size change and potential strain incorporation resulting in overall enhanced performance.
Keywords :
annealing; contact resistance; high-temperature electronics; surface roughness; thermal stability; contact resistivity; film properties; grain size change; high temperature silicide process; millisecond anneal; strain incorporation; surface roughness; thermal stability; Annealing; Conductivity; Implants; Nickel; Silicides; Silicon; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872239
Filename :
5872239
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3501156
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