• DocumentCode
    3501156
  • Title

    High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2

  • Author

    Loh, W.-Y. ; Yang, Y.R. ; Hung, P.Y. ; Sassman, B. ; Kenney, C. ; Bersuker, G. ; Majhi, P. ; Kirsch, P.D. ; Jammy, R.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel high temperature silicide process using millisecond anneal is reported. Superior thermal stability, film properties (Rs, surface roughness) and low contact resistivity to n+ silicon of <; 1 Ωμm2 is demonstrated with milli-second silicide anneal which results in grain size change and potential strain incorporation resulting in overall enhanced performance.
  • Keywords
    annealing; contact resistance; high-temperature electronics; surface roughness; thermal stability; contact resistivity; film properties; grain size change; high temperature silicide process; millisecond anneal; strain incorporation; surface roughness; thermal stability; Annealing; Conductivity; Implants; Nickel; Silicides; Silicon; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872239
  • Filename
    5872239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3501156