Title :
III-V devices featuring Si transistor-like process and its heterogeneous integration on Si substrate
Author :
Ko, C.-H. ; Wu, C.-H. ; Cheng, C.-C. ; Lin, H.-Y. ; Lin, Y.-R. ; Wann, Clement H.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
Abstract :
High mobility III-V compound semiconductors are the most attractive candidates who could provide enhanced performance for future logic applications. Even so, people still hesitate to accelerate III-V materials entering into Si CMOS world. To relieve people´s concerns, the integration of thin III-V on Si and Si transistor-like technique or architecture should be demonstrated.
Keywords :
III-V semiconductors; MOSFET; elemental semiconductors; silicon; CMOS; III-V devices; III-V materials; Si; high mobility III-V compound semiconductors; transistor-like process; CMOS integrated circuits; Gallium arsenide; Indium phosphide; Logic gates; Silicon; Surface treatment;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872240
