Title :
A new interface defect spectroscopy method
Author :
Ryan, J.T. ; Yu, L.C. ; Han, J.H. ; Kopanski, J.J. ; Cheung, K.P. ; Zhang, F. ; Wang, C. ; Campbell, J.P. ; Suehle, J.S. ; Tilak, V. ; Fronheiser, J.
Author_Institution :
NIST, Gaithersburg, MD, USA
Abstract :
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
Keywords :
MOSFET; charge pump circuits; interface states; semiconductor device manufacture; silicon; silicon compounds; spectroscopy; Si-SiO2; interface defect spectroscopy method; interface state amphoteric nature; production quality submicron device; variable height charge pumping; Current measurement; Filling; Frequency measurement; Interface states; Production; Silicon; Pb centers; charge pumping; interface states;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872242
