Title :
Physical mechanism of HfO2-based bipolar resistive random access memory
Author :
Chang, Huan-Lin ; Li, Hsuan-Chih ; Liu, C.W. ; Chen, F. ; Tsai, M.-J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The (anode) TiN/Ti/HfO2/TiN (cathode) resistive random access memory (RRAM) has shown yield ~100%. Its simple metal-insulator-metal (MIM) structure exhibits great potential for an embedded BEOL memory compatible with the high-k/metal gate CMOS process. There have been many theories of RRAM physical mechanism in the literature. This paper focuses on HfO2-based RRAM and describes a complete physical mechanism from forming, SET/RESET, current conduction, to explanations of various observed phenomena including multilevel, cell size scaling, resistance fluctuation, soft error, and non-abrupt RESRT process. Finally, suggestions for device optimization are given based on the physical model.
Keywords :
CMOS integrated circuits; MIM structures; bipolar memory circuits; hafnium compounds; random-access storage; titanium compounds; HfO2-based bipolar resistive random access memory; RRAM; SET/RESET; TiN-Ti-HfO2-TiN; current conduction; device optimization; embedded BEOL memory; high-k/metal gate CMOS process; metal-insulator-metal structure; Anodes; Cathodes; Fluctuations; Hafnium; Ions; Resistance; Tin;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872253
