• DocumentCode
    3501507
  • Title

    Characterization of α-sexithienyl thin films deposited by OMBD (organic molecular beam deposition) technique

  • Author

    Park, Youg In ; Kwon, Oh Kwan ; Choi, Jong Sun ; Kim, Young Kwan ; Shin, Dong Myuag ; Kang, Dou Yoi

  • Author_Institution
    Hongik Univ., Seoul, South Korea
  • Volume
    2
  • fYear
    1997
  • fDate
    25 -30 May 1997
  • Firstpage
    617
  • Abstract
    α-sexithiethyl (α-6T) thin films were deposited by Organic Molecular Beam Deposition (OMBD) technique. The α-6T was synthesized and purified by the sublimation method. The thin films of the α-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecular orientations of α-6T films were investigated with polarized electronic absorption spectroscopy. The molecules in the α-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The film deposited at an elevated substrate temperature (~90°C) showed higher conductivity than the film deposited at room temperature
  • Keywords
    atomic force microscopy; electrical conductivity; molecular orientation; organic compounds; organic semiconductors; semiconductor growth; semiconductor materials; semiconductor thin films; vacuum deposited coatings; vacuum deposition; 20 C; 90 C; AFM; a-sexithienyl thin films; conductivity; deposition conditions; deposition rate; molecular orientations; organic molecular beam deposition; polarized electronic absorption spectroscopy; semiconductor; sublimation method; substrate temperature; vacuum pressure; Artificial intelligence; Glass; Heating; Optical polarization; Powders; Silicon; Tellurium; Thickness measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    0-7803-2651-2
  • Type

    conf

  • DOI
    10.1109/ICPADM.1997.616510
  • Filename
    616510