Title :
Wafer level Tungsten-Glass bonding with photosensitive BCB
Author :
Yi Shan ; Nannan Li ; Yunhui Zhu ; Yiming Zhang ; Suhui Chen ; Jin Luo ; Jia Hu ; Jing Chen ; Yufeng Jin
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
Tungsten is a promising bulk material for microsystem applications for its high melting point, radiation resistance, high strength and conductivity. In this paper, wafer level Tungsten-Glass wafer bonding was carried out with photodefinable BCB, the results were compared with Si-Glass bonding. A high-yield BCB bonding technology was developed with good uniformity and relatively high bonding strength, which can be used in future device integration and micropackage.
Keywords :
electrical conductivity; elemental semiconductors; glass; melting point; radiation hardening (electronics); tungsten; wafer bonding; wafer level packaging; W; bonding strength; bulk material; conductivity; high-yield BCB bonding technology; melting point; microsystem application; photodefinable BCB; photosensitive BCB; radiation resistance; wafer level tungsten-glass wafer bonding; Bonding; Glass; Packaging; Resins; Strips; Tungsten; Wafer bonding;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474581
