Title :
1.3 μm single mode PBH DFB lasers by three step MOCVD
Author :
Kang, Myung-Koo ; Oh, Hwan-Sool
Author_Institution :
Dept. of Electron. Eng., Kon-Kuk Univ., Seoul, South Korea
Abstract :
InGaAsP/InP planar heterostructure (PBH) distributed feedback (DFB) lasers (LD) operating at 1.3 μm were fabricated by a three step MOCVD process. The CW laser threshold and the slope efficiency from these lasers are 14.3 mA and 0.16 mW/mA per facet at room temperature. Single longitudinal mode operation with side mode suppression of more than 35 dB is obtained at 5 mW
Keywords :
CVD coatings; III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor lasers; 1.3 micron; 14.3 mA; 5 mW; CW laser threshold; InGaAsP-InP; PBH DFB laser; planar heterostructure distributed feedback laser; side mode suppression; single longitudinal mode operation; slope efficiency; three step MOCVD; Chemical lasers; Distributed feedback devices; Fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser modes; MOCVD; Optical fiber communication; Surface emitting lasers;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616513
