DocumentCode :
3501544
Title :
Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs
Author :
Cheng, X.S. ; Hsieh, E.R. ; Chung, Steve S. ; Tsai, C.H. ; Tsai, T.L. ; Chiang, W.T. ; Tsai, C.T. ; Liang, C.W.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to +15.2% of Id enhancement over the conventional MOSFET. The VSM demonstrates more accurate Bsat and vinj results than the conventional Temperature Dependent Method(TDM) ones.
Keywords :
MOSFET; Schottky barriers; carrier mobility; semiconductor device models; DSS barrier MOSFET; VSM; ballistic efficiency; carrier transport parameter; dopant-segregated Schottky-barrier MOSFET; injection velocity; low series source-drain resistance; velocity saturation model; Decision support systems; MOSFETs; Mathematical model; Performance evaluation; Temperature dependence; Time division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872257
Filename :
5872257
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3501544
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