Title :
Metal wafer bonding for 3D interconnects and advanced packaging
Author :
Dragoi, Viorel ; Pabo, E. ; Wagenleitner, T. ; Flotgen, C. ; Rebhan, B. ; Corn, K.
Author_Institution :
EV Group, St. Florian am Inn, Austria
Abstract :
Metal films can be used as bonding layers at wafer-level in manufacturing processes for device assembly as well as just for electrical integration of different components. One has to distinguish between two categories of processes: metal thermo-compression bonding on one side, and bonding with formation of a eutectic or an intermetallic alloy layer. The different process principles determine also the applications area for each. From electrical interconnections to wafer-level packaging (with special emphasis on vacuum packaging) metal wafer bonding is a very important technology in manufacturing processes.
Keywords :
interconnections; semiconductor device packaging; three-dimensional integrated circuits; wafer bonding; 3D interconnects; advanced packaging; bonding layers; device assembly; electrical integration; eutectic; intermetallic alloy layer; manufacturing processes; metal films; metal thermo compression bonding; metal wafer bonding; vacuum packaging; wafer level packaging; Bonding; Heating; Surface treatment; Tin; Wafer bonding;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474582
