Title :
Lithographic properties of SiNx and Se75Ge 25 thin films as the low-energy ion-beam resist
Author :
Lee, Hyun-Yong ; Chung, Hong-Bay
Author_Institution :
Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
A low-energy focused-ion-beam lithography has been investigated, where low-pressure chemical-vapor-deposited (LPCVD) SiNx and thermal-evaporated(TE) Se75Ge25 thin films are used as resists and exposure is by Ga+-ion sources below 30 keV. Ga+-implanted Se75Ge25 and SiNx thin films act as positive-type and negative-type resists for the development conditions using HNO3+HCl+H2 O wet-etching and CF4 reactive-ion-etching (RIE), respectively. As exposing energy for Se75Ge25 resist increases from 10 to 30 keV, the threshold dose decreases from 4.0×1015 to 1.4×1015 ions/cm2 and then the imaging contrasts appear to be approximately 0.5 and 2.5, respectively. Considering that threshold dose and contrasts in each type resists have a different energy dependence, a predominant factor in this lithography can be understood differently from each other
Keywords :
CVD coatings; focused ion beam technology; germanium compounds; ion beam lithography; resists; selenium compounds; silicon compounds; vacuum deposited coatings; 10 to 30 keV; Ga; Ga+-ion exposure; LPCVD; Se75Ge25; SiN; SiNx; development; imaging contrast; low-energy focused-ion-beam lithography; reactive ion etching; resist; thermal evaporation; thin film; threshold dose; wet etching; Atomic beams; Backscatter; Bonding; Chemicals; Gaussian distribution; Projectiles; Resists; Silicon compounds; Substrates; Transistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616515
