FDSOI radiation dosimeters

Author

Yau, Jeng-Bang ; Gordon, Michael S. ; Rodbell, Kenneth P. ; Koester, Steven J. ; DeHaven, Patrick W. ; Park, Dae-Gyu ; Haensch, Wilfried E.

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (V_th) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of ~3 mV/krad(SiO₂) to 1 MeV protons and ~10 mV/krad(SiO₂) to 8 keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.

Keywords

CMOS integrated circuits; X-ray detection; alpha-particle detection; dosimeters; dosimetry; particle traps; proton detection; radiation effects; silicon-on-insulator; BOX charge retention time; CMOS process compatibility; FDSOI radiation dosimeter fabrication; Si; X-ray detection; alpha-particle detection; buried oxide; fully-depleted silicon-on-insulator substrate; ionizing radiation detection; microelectronics radiation dosimetry; proton detection; radiation-induced charge trap; threshold voltage; Ionizing radiation; Logic gates; Protons; Radiation effects; Sensitivity; Silicon; X-rays;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872260

Filename

5872260