Title :
FDSOI radiation dosimeters
Author :
Yau, Jeng-Bang ; Gordon, Michael S. ; Rodbell, Kenneth P. ; Koester, Steven J. ; DeHaven, Patrick W. ; Park, Dae-Gyu ; Haensch, Wilfried E.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We describe the fabrication of radiation dosimeters utilizing fully-depleted silicon-on insulator (FDSOI) substrates, and further demonstrate the detection of various ionizing radiation types including protons, a-particles, and X-rays by the threshold voltage (Vth) changes caused by the radiation-induced charge trapped in the buried oxide. Our FDSOI dosimeter exhibits a sensitivity of ~3 mV/krad(SiO2) to 1 MeV protons and ~10 mV/krad(SiO2) to 8 keV X-rays, respectively. The comparison of FDSOI dosimeter with existing bulk-Si detectors shows comparable sensitivity, with the additional advantage of up to 90 days of BOX charge retention time. Our findings are encouraging and provide innovative implementation of SOI technology in microelectronics radiation dosimetry while maintaining CMOS process compatibility.
Keywords :
CMOS integrated circuits; X-ray detection; alpha-particle detection; dosimeters; dosimetry; particle traps; proton detection; radiation effects; silicon-on-insulator; BOX charge retention time; CMOS process compatibility; FDSOI radiation dosimeter fabrication; Si; X-ray detection; alpha-particle detection; buried oxide; fully-depleted silicon-on-insulator substrate; ionizing radiation detection; microelectronics radiation dosimetry; proton detection; radiation-induced charge trap; threshold voltage; Ionizing radiation; Logic gates; Protons; Radiation effects; Sensitivity; Silicon; X-rays;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872260
