DocumentCode :
3501700
Title :
Oscillation efficiency of transfer electrons nitrid diodes
Author :
Prokhorov, E.D. ; Botsula, O.V.
Author_Institution :
V. N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
fYear :
2010
fDate :
21-26 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
The basic criteria of perspective of using of intervalley electron transfer (IET) semiconductor materials for a generation, amplifier and frequency multiplication are oscillation efficiency and frequency operation range. The most effective operation mode is idealized LSE mode. Thus, it is possible to be able to estimate perspective of one or another semiconductor compound for fabrication IET - devise (TED) in the frequencies range by analyzing LSE mode. Such analysis is below conducted for nitride compound (AlN, GaN, InN) and other. We will consider velocity-field characteristic on frequencies on which the inertance of redistribution of electrons does not yet show up between the valleys of conductivity zone of the examined compound.
Keywords :
III-V semiconductors; aluminium compounds; electrical conductivity; gallium compounds; indium compounds; semiconductor diodes; wide band gap semiconductors; AlN; GaN; InN; conductivity zone valleys; electron redistribution; frequency operation range; idealized LSE mode; intervalley electron transfer semiconductor materials; nitride compound; operation mode; oscillation efficiency; semiconductor compound; transfer electron nitride diodes; velocity-field characteristic; Dispersion; Electric potential; Gallium arsenide; Gallium nitride; Metals; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4244-7900-9
Type :
conf
DOI :
10.1109/MSMW.2010.5546141
Filename :
5546141
Link To Document :
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