DocumentCode :
3501741
Title :
Plasma-surface interactions of nanoporous silica during plasma-based pattern transfer using C/sub 4/F/sub 8/ and C/sub 4/F/sub 8//Ar gas mixtures
Author :
Xuefang Hua ; Stolz, C. ; Oehrlein, G.S. ; Lazzeri, P. ; Coghe, N. ; Anderle, M. ; Inoki, C.K. ; Kuan, T.S. ; Jiang, P.
Author_Institution :
Dept. of Phys., Maryland Univ., College Park, MD, USA
fYear :
2004
fDate :
1-1 July 2004
Firstpage :
167
Abstract :
Summary form only given. Nanoporous materials (NPM) are a compelling class of candidate materials for future microelectronic and optoelectronic applications that require ultra-low dielectric constants and/or refractive indices, respectively. The plasma-surface interactions of NPM are strongly modified relative to conventional homogeneous materials. We have investigated plasma surface interactions of nanoporous silica (NPS) films with porosities of up to 50%, SiO/sub 2/ and organosilicate films in C/sub 4/F/sub 8//Ar discharges, which were well characterized by numerous diagnostics. Surfaces of the various materials after the above plasma processes were studied by X-ray photoemission spectroscopy (XPS) and transmission electron microscopy (TEM) as a function of process conditions. In addition, time-of-flight secondary ion mass spectrometry (SIMS) (in static or dynamic mode) was used to obtain additional information on the compounds formed on the surfaces of these materials, or on variations of elemental densities as a function of depth. The surface modification of NPS upon different plasma processing will be described along with the plasma characterization. The plasma surface interactions are strongly dependent on both plasma properties and surface morphology, and the interaction of these will be discussed in detail.
Keywords :
X-ray photoelectron spectra; argon; carbon compounds; discharges (electric); gas mixtures; nanoporous materials; organic compounds; plasma density; plasma diagnostics; plasma materials processing; plasma-wall interactions; porosity; secondary ion mass spectra; silicon compounds; surface morphology; surface treatment; thin films; time of flight spectra; transmission electron microscopy; Ar; C/sub 4/F/sub 8/; C/sub 4/F/sub 8/-Ar; C/sub 4/F/sub 8//Ar discharges; SIMS; SiO/sub 2/; TEM; X-ray photoemission spectroscopy; XPS; dielectric constants; gas mixtures; homogeneous materials; microelectronics; nanoporous materials; nanoporous silica film; optoelectronic applications; organosilicate films; plasma process; plasma properties; plasma-based pattern transfer; plasma-surface interactions; porosity; refractive index; surface modification; surface morphology; time-of-flight secondary ion mass spectrometry; transmission electron microscopy; Dielectric materials; Nanoporous materials; Plasma applications; Plasma density; Plasma diagnostics; Plasma materials processing; Plasma properties; Silicon compounds; Surface discharges; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on
Conference_Location :
Baltimore, MD, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-8334-6
Type :
conf
DOI :
10.1109/PLASMA.2004.1339718
Filename :
1339718
Link To Document :
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