Characterization study of plasma polymerized hexamethyldisiloxane thin films

Author

Lee, Sang-Hee ; Park, Jong-Kwan ; Park, Gu-Bum ; Cho, Ki-Sun ; Woo, Ho-Whan ; Lee, Duck-Chool

Author_Institution

Inha Univ., Inchon, South Korea

Volume

2

fYear

1997

fDate

25 -30 May 1997

Firstpage

639

Abstract

In this paper, we investigated characteristics of hexamethyldisiloxane thin films by plasma polymerization. Thin films were prepared by interelectrode capacitively coupled type apparatus and in conditions with carrier gas flow rate of 11 [cc/min], gas pressure of 0.1 [Torr], discharge frequency of 13.56 [MH_z] and discharge power of 30-90 [W]. The relative dielectric constant and dielectric loss tangent of thin films showed 3.212-3.805 and 0.0026 ~0.0451 in alternating frequency of 10³-10⁶ [Hz]

Keywords

dielectric losses; dielectric thin films; materials preparation; permittivity; polymerisation; 0.1 torr; 13.56 MHz; 1E3 to 1E6 Hz; 30 to 90 W; carrier gas flow rate; dielectric loss tangent; discharge frequency; discharge power; gas pressure; hexamethyldisiloxane thin films; interelectrode capacitively coupled type apparatus; plasma polymerization; relative dielectric constant; Dielectric constant; Dielectric losses; Dielectric materials; Dielectric thin films; Fluid flow; Frequency; Plasma materials processing; Plasma properties; Polymer films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-2651-2

Type

conf

DOI

10.1109/ICPADM.1997.616516

Filename

616516