DocumentCode
3501858
Title
A quantum approach to nanocrystal nonvolatile memory
Author
Wang, Pei-Yu ; Tsui, Bing-Yue
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
25-27 April 2011
Firstpage
1
Lastpage
2
Abstract
This work establishes an accurate 3D physical model with quantum approach to analyze the small size nanocrystal (NC) nonvolatile memory. The basic memory performance, programming and erasing, is studied in detail. The trapping efficiency, Coulomb blockade and quantum confinement are the main factors affecting the memory performance. Tradeoff between these factors exists on the selection of NC size. The simulation results are also in agreement with other general experiment studies qualitatively.
Keywords
Coulomb blockade; nanostructured materials; random-access storage; 3D physical model; Coulomb blockade; quantum approach; quantum confinement; small size nanocrystal nonvolatile memory; trapping efficiency; Electric fields; Energy states; Nonvolatile memory; Potential well; Programming; Three dimensional displays; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-8493-5
Type
conf
DOI
10.1109/VTSA.2011.5872273
Filename
5872273
Link To Document