DocumentCode
3502010
Title
The use of the manufacturing sensitivity model forms to comprehend layout manufacturing robustness for use during device design
Author
Melvin, Lawrence S., III ; Zhang, Daniel N. ; Strozewski, Kirk J. ; Wolfer, Skye
Author_Institution
Synopsys, Inc., Mountain View, CA
fYear
2006
fDate
27-29 March 2006
Lastpage
490
Abstract
As semiconductor device manufacturing processes are reducing feature sizes ever smaller, the manufacturing processes are becoming ever more complex. This complexity is having significant impacts on data communications between device design teams and manufacturing process teams. With current manufacturing process constraints, the constraints placed on a design team are difficult to conceptualize, communicate and enforce. This study describes a new type of process model, referred to as a focus sensitivity model that is capable of speeding up the model based analysis of design patterns for manufacturing robustness. The FSM is a difference model based on the photolithography process model. The FSM produces information about multiple process states in one pass. It also produces interpreted data, which removes the need to understand the performance of individual process states. Finally, FSM is capable of analyzing drawn patterns without optical proximity correction applied to determine pattern manufacturability
Keywords
photolithography; proximity effect (lithography); semiconductor device manufacture; semiconductor process modelling; data communications; focus sensitivity model; manufacturing process constraints; manufacturing sensitivity model; optical proximity correction; pattern manufacturability; photolithography process model; semiconductor device design; Costs; Data communication; Kirk field collapse effect; Lithography; Manufacturing processes; Pattern analysis; Robustness; Semiconductor device manufacture; Semiconductor devices; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-2523-7
Type
conf
DOI
10.1109/ISQED.2006.135
Filename
1613183
Link To Document