Title :
The optimization of poly-Si cells
Author :
Kim, S.S. ; Lim, D.G. ; Kim, H.W. ; Yi, J.
Author_Institution :
Dept. of Electr. Eng., Kyun Kwan Univ., Kyunggi, South Korea
Abstract :
We investigated the optimization of poly-Si solar cell characteristics for various factors. The influencing factors were investigated in terms of emitter thickness, thermal treatment, surface treatment, grid design, and contact metal. First, we carried out solar cell simulation using a PC1D software package. Then poly-Si solar cells were fabricated and characterized in terms of structural, electrical, and optical properties. Pretreatment temperature of 900°C, chemical surface polishing of poly-Si substrate, emitter thickness of 0.43 μm, top Yb metal, and grid finger shading area of 7% gave an improved conversion efficiency of poly-Si solar cell
Keywords :
digital simulation; elemental semiconductors; polishing; semiconductor device testing; silicon; solar cells; 0.43 micron; 900 degC; PC1D software package; Si; chemical surface polishing; conversion efficiency; emitter thickness; grid design; grid finger shading area; polysilicon solar cells; pretreatment temperature; solar cell simulation; surface treatment; thermal treatment; Charge carrier lifetime; Chemicals; Conductivity; Costs; Doping; Gettering; Grain boundaries; Passivation; Photovoltaic cells; Surface treatment;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616517
