Title :
Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology
Author :
Lai, Tai-Xiang ; Ker, Ming-Dou
Author_Institution :
Inst. of Electron., National Chiao-Tung Univ., Hsinchu
Abstract :
Cable discharge event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HEM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-mum CMOS technology is worse than its HBMESD robustness
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; local area networks; 0.25 micron; 100 ns; CMOS; ESD; Ethernet integrated circuits; NMOS device; cable discharge event; electrostatic discharge; human-body-model; integrated circuits reliability; long-pulse transmission line pulsing system; CMOS integrated circuits; CMOS technology; Distributed parameter circuits; Electric variables; Electrostatic discharge; Ethernet networks; Integrated circuit reliability; Integrated circuit technology; Power cables; Robustness;
Conference_Titel :
Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2523-7
DOI :
10.1109/ISQED.2006.85
