DocumentCode :
3502386
Title :
Magnetoresistance of two-barrier magnetic tunnel junctions
Author :
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution :
Usikov Inst. of Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov, Ukraine
fYear :
2010
fDate :
21-26 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
In this paper the theoretical investigation of giant tunnel magnetoresistance effect in the two-barrier magnetic tunnel junctions has been carried out. We assume that emitter and collector are ferromagnetic whereas two barriers and middle part of the two-barrier magnetic tunnel junctions consist of dielectrics. We use the two-band model of free electrons in ferromagnetic electrodes.
Keywords :
band model of magnetism; ferromagnetic materials; giant magnetoresistance; tunnelling magnetoresistance; ferromagnetic electrode; free electrons; giant tunnel magnetoresistance effect; magnetic tunnel junctions; two-band model; Electric potential; Electrodes; Iron; Junctions; Magnetic tunneling; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4244-7900-9
Type :
conf
DOI :
10.1109/MSMW.2010.5546173
Filename :
5546173
Link To Document :
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