DocumentCode :
3502608
Title :
The challenges and impact of parasitic extraction at 65 nm
Author :
Chow, Karen
Author_Institution :
Mentor Graphics, Wilsonville, CA
fYear :
2006
fDate :
27-29 March 2006
Lastpage :
702
Abstract :
Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies
Keywords :
foundries; integrated circuit manufacture; nanoelectronics; 65 nm; industry wide adoption; parasitic extraction; process variability; Delay effects; Digital circuits; Foundries; Graphics; Integrated circuit interconnections; Manufacturing; Switching circuits; Threshold voltage; Transistors; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2523-7
Type :
conf
DOI :
10.1109/ISQED.2006.133
Filename :
1613218
Link To Document :
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