DocumentCode :
3503149
Title :
Investigation of competitive adsorption between accelerator and suppressor in TSV copper electroplating
Author :
Yue Lu ; Haiyong Cao ; Qi Sun ; Huiqin Ling ; Ming Li ; Jiangyan Sun
Author_Institution :
Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear :
2012
fDate :
13-16 Aug. 2012
Firstpage :
434
Lastpage :
437
Abstract :
In TSV copper electroplating, the goal is to achieve superfilling deposition. In order to reach the bottom-up in TSV copper electroplating, some additives (accelerator suppressor and leveler) are added into the electroplating bath. To know the relationship between additives in the plating solution is very important. In the present work, by means of linear sweep voltammetry (LSV) and cyclic voltammogram (CV), it is found that there is a competition between the accelerator and the suppressor. At the less negative potential, the accelerator shows a strong adsorption property, and the suppressor plays its role in the relatively more negative potential area, which shows a competitive adsorption relationship between the accelerator and the suppressor during the process of bottom-up filling.
Keywords :
adsorption; copper; electroplating; integrated circuit packaging; surge protection; three-dimensional integrated circuits; voltammetry (chemical analysis); CV; Cu; LSV; TSV copper electroplating; accelerator; adsorption property; bottom-up filling process; competitive adsorption relationship; cyclic voltammogram; electroplating bath; linear sweep voltammetry; plating solution; super-filling deposition; suppressor; Additives; Adsorption; Copper; Electric potential; Filling; Packaging; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
Type :
conf
DOI :
10.1109/ICEPT-HDP.2012.6474652
Filename :
6474652
Link To Document :
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