• DocumentCode
    3503170
  • Title

    Relation crystal structure with breakdown of polyethylene thin film

  • Author

    Park, Kang Sik ; Kim, Jong Suk ; Han, Sang Ok

  • Author_Institution
    Dept. of Electr., Chungnam Jnr. Coll., Taejon, South Korea
  • Volume
    2
  • fYear
    1997
  • fDate
    25 -30 May 1997
  • Firstpage
    662
  • Abstract
    With high field for both crystalline and amorphous region existing on same plane, dielectric strength and breakdown sites are investigated. Scanning electron micrograph for the breakdown specimen show that crystalline and amorphous region are morphologically different and that those may not be equal in thickness. From the result, we found that breakdown of purified specimens occurs mostly at the boundary line between crystalline and amorphous region and the sites of breakdown of unpurified specimens were randomly distributed all the region of specimens. From the results, breakdown of uncontaminated PE are attribute to non-continuity of crystal structure which is regarded as a defects
  • Keywords
    dielectric thin films; electric breakdown; polyethylene insulation; polymer films; polymer structure; scanning electron microscopy; amorphous region; breakdown; crystal structure; crystalline region; defects; dielectric strength; high field; morphology; polyethylene thin film; scanning electron microscopy; Amorphous materials; Capacitance measurement; Crystalline materials; Crystallization; Dielectric breakdown; Electric breakdown; Electrical resistance measurement; Electrodes; Polyethylene; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    0-7803-2651-2
  • Type

    conf

  • DOI
    10.1109/ICPADM.1997.616522
  • Filename
    616522