ZnO nanowires lateral field emission devices: Control on nanowire orientation and electron emission performance

Author

Li, Duo ; She, Juncong ; Xu, ShaoZeng ; Deng, Shaozhi

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

ZnO nanowires (NWs) lateral field emission devices were fabricated. The NW-clusters were controlled to locally grow on the edges of the electrodes with different spread-angles. Devices with NWs in 0°~57° tilt-angles possess better field emission property. Typically, the device can operate at a bias of 477 V (anode-cathode gap: 50 μm) with emission current of 9.3 μA (current density: 6.22 A/cm²). Both experimental and numerical simulation results showed that the tilt-angle of the NW is crucial for field electron emission of the device. The work opens up possibilities on developing nanowire lateral field emission device for vacuum micro-electronics applications.

Keywords

II-VI semiconductors; cathodes; electrodes; electron field emission; nanowires; numerical analysis; vacuum microelectronics; wide band gap semiconductors; zinc compounds; NW lateral field emission devices; ZnO; anode-cathode gap; current 9.3 muA; electrodes; electron emission performance; field electron emission; nanowire lateral field emission devices; nanowire orientation; numerical simulation; vacuum microelectronics; voltage 477 V; Anodes; Cathodes; Nanoscale devices; Nanowires; Numerical simulation; Zinc oxide; Lateral field emission device; ZnO nanowire; electron trajectory; numerical simulation; solution-phase grown;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316835

Filename

6316835