CNT photocathodes based on GaAs high-frequency photoswitches

Author

Yilmazoglu, O. ; Al-Daffaie, S. ; Hartnagel, H.L. ; Nick, C. ; Thielemann, C. ; Joshi, R. ; Yadav, S. ; Schneider, J.J.

Author_Institution

Dept. of High Freq. Electron., Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

A high-frequency photocathode based on carbon nanotube (CNT) blocks on semiisolating GaAs or low-temperature grown GaAs was fabricated and used for electron emission in a diode configuration. The CNT blocks can achieve high currents and current densities of I=0.5 mA and J=28 mA/cm² at E=2.1 V/μm, respectively. The photomodulation was achieved with a GaAs photoswitch electrically connected to the bottom of the CNT block emitter. This photocathode can find applications in high frequency tubes and optically driven X-ray sources.

Keywords

III-V semiconductors; carbon nanotubes; current density; gallium arsenide; photocathodes; photodiodes; photoemission; CNT block emitter; CNT photocathodes; GaAs; carbon nanotube blocks; current density; diode configuration; electron emission; gallium arsenide high-frequency photoswitches; high-frequency photocathode; high-frequency tubes; low-temperature grown gallium arsenide; optically-driven X-ray sources; photomodulation; Carbon nanotubes; Cathodes; Current density; Electron tubes; Gallium arsenide; Lighting; Modulation; CNT; carbon nanotube; low-temperature GaAs; photocathode;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316840

Filename

6316840