A novel substrate-bias generator for low-power and high-speed DRAMs

Author

Kwack, Seung-Wuk ; Lee, Seung-Hoon ; Joo, Jong-Do ; Ko, Bong-Gyun ; Song, Byung-Geun ; Park, Jae-Geun ; Kwack, Kae-Dal

Author_Institution

Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea

Volume

2

fYear

1999

fDate

36495

Firstpage

864

Abstract

This paper describes an efficient substrate-bias generator (SBG) for low-power and high-speed DRAMs. In this SBG, the charge pumping circuit and driving and supply voltage circuit are newly proposed. The proposed circuit has advantages as follows. First, the charge pumping circuit doesn´t suffer from V_T loss and is applicable to low-voltage DRAMs. Second, the driving and supply voltage switching circuit can supply stable substrate voltage by switching the supply voltage of the driving stage. So, it can reduce the power consumption by making a stable substrate back bias voltage (V˙_BB) because of its high pumping efficiency

Keywords

DRAM chips; driver circuits; high-speed integrated circuits; low-power electronics; pulse generators; charge pumping circuit; driving circuit; high-speed DRAMs; low-power DRAMs; power consumption; pumping efficiency; stable substrate voltage; substrate-bias generator; supply voltage circuit; switching circuit; Capacitance; Charge pumps; Clocks; Energy consumption; MOSFETs; Nuclear power generation; Random access memory; Ring oscillators; Switching circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 99. Proceedings of the IEEE Region 10 Conference

Conference_Location

Cheju Island

Print_ISBN

0-7803-5739-6

Type

conf

DOI

10.1109/TENCON.1999.818555

Filename

818555