Title :
Electron field emission from cathodes with Si and SiGe nanoclusters
Author :
Evtukh, A. ; Litovchenko, V. ; Semenenko, M. ; Steblova, O. ; Yukhimchuk, V. ; Yilmazoglu, O. ; Hartnagel, H. ; Mimura, H.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The peculiarities of electron field emission from Si cathodes with Si and SiGe nanoclusters have been investigated in details. To form Si nanoclusters on the flat surface or Si tips the LP CVD, IPS, or thermal evaporation methods were used for deposition of initial silicon enriched SiOx (x≤1.5) films in the thickness range 2-10 nm. In some cases the amorphous ultrathin Si film has been deposited. During high temperature annealing the self-organized growth of the Si nanoclusters occurs in the films. The size and spatial density of the Si clusters depend on the initial film thickness, index stoichiometry (x) and annealing temperature. The Si clusters are imbedded into SiO2 matrix or coated with ultrathin SiOx shell. The nanometer sized SiGe nanoclusters were formed by MBE method. The peak of emission current and changing the slope in current-voltage characteristics have been observed in some cases. The appearance of the emission current peaks has been explained according to previously proposed theoretical model.
Keywords :
Ge-Si alloys; annealing; cathodes; chemical vapour deposition; coatings; electron field emission; elemental semiconductors; field evaporation; molecular beam epitaxial growth; nanostructured materials; silicon; stoichiometry; thin films; IPS; LP CVD; MBE method; Si-Si; Si-SiGe; amorphous ultrathin film; cathode; current-voltage characteristic; electron field emission; emission current; index stoichiometry; initial film thickness; initial silicon enriched deposition; low-pressure chemical vapour deposition; nanocluster; nanometer; self-organized growth; size 2 nm to 10 nm; size density; spatial density; temperature annealing; thermal evaporation method; ultrathin shell coating; Cathodes; Electric fields; Films; Nanoparticles; Resonant tunneling devices; Silicon; Silicon germanium; electron field emission; high frequency; quantum well; resonant-tunneling; silicon; silicon oxide; silicon-germanium;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location :
Jeju
Print_ISBN :
978-1-4673-1983-6
Electronic_ISBN :
pending
DOI :
10.1109/IVNC.2012.6316844