Title :
Electric and dielectric properties in MIM structure of copolymer LB films
Author :
Yoo, Seung-Yeop ; Jung, Sang-Burm ; Park, Jae-Chul ; Kwon, Young-Soo
Author_Institution :
Dept. of Electr. Eng., Dong-A Univ., Pusan, South Korea
Abstract :
We investigated electric and dielectric properties of metal/insulator/metal (MIM) device using maleate copolymer LB films. The thickness of maleate copolymer LB film measured by ellipsometry and X-ray diffraction was about 27-30[Å]. The maleate copolymer LB films have the property of insulators such as organic ultra-thin films. The electrical conduction mechanism was Schottky current determined by the measurement of current-voltage characteristics, and its conductivity was 10-14-10-15 [S/cm]. Dielectric constant was about 5.0-6.0 using various measurement methods: I-V and frequency-dependent dielectric properties. Schottky barrier was about 0.9-1.0[eV]. The activation energy was 0.74 [eV] from the measurement of current-temperature characteristics. The frequency-dependent dielectric properties involved orientational polarization by the dipole
Keywords :
Langmuir-Blodgett films; MIM devices; X-ray diffraction; dielectric polarisation; electrical conductivity; ellipsometry; molecular electronics; permittivity; polymer blends; 0.74 eV; 0.9 to 1.0 eV; 1E-15 to 1E-14 S/cm; 27 to 30 angstrom; MIM structure; Schottky current; X-ray diffraction; activation energy; copolymer LB films; current-temperature characteristics; current-voltage characteristics; dielectric constant; electrical conduction mechanism; ellipsometry; frequency-dependent dielectric properties; molecular electronics; orientational polarization; Conductivity measurement; Current measurement; Dielectric devices; Dielectric measurements; Dielectrics and electrical insulation; Ellipsometry; Frequency; Metal-insulator structures; Thickness measurement; X-ray diffraction;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616528
