CVPE growth of GaN films

Author

Oh, T.H. ; Park, B.J. ; Kim, I.H. ; Kum, B.H. ; Shin, M.W.

Author_Institution

Dept. of Inorg. Mater. Eng., Myong-Ji Univ., Kyunggi, South Korea

Volume

2

fYear

1997

fDate

25 -30 May 1997

Firstpage

693

Abstract

In this paper we will discuss the growth of Gallium Nitride (GaN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH₃ and GaCl₃. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes

Keywords

III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; (0001) sapphire substrate; 1040 C; 363 nm; CVPE growth; GaN; X-ray diffraction; chlorine vapor phase epitaxy; gallium nitride film; photoluminescence; Epitaxial growth; Gallium nitride; Gases; III-V semiconductor materials; Inductors; Nitrogen; Semiconductor films; Substrates; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-2651-2

Type

conf

DOI

10.1109/ICPADM.1997.616530

Filename

616530