Title :
CVPE growth of GaN films
Author :
Oh, T.H. ; Park, B.J. ; Kim, I.H. ; Kum, B.H. ; Shin, M.W.
Author_Institution :
Dept. of Inorg. Mater. Eng., Myong-Ji Univ., Kyunggi, South Korea
Abstract :
In this paper we will discuss the growth of Gallium Nitride (GaN) films via the Chlorine Vapor Phase Epitaxy (CVPE) technique on (0001) sapphire substrate. At a temperature of 1040 C, GaN films are grown at rates between 40 and 80 μm/hr. The growth rate and film quality based on XRD data are found to strongly dependent on the flow rate of source gases, NH3 and GaCl3. XRD measurements indicate FWHM value of (0002) peak less than 0.35 deg for samples with thickness greater than 40 μm. Room temperature PL measurements of the samples indicate a strong emission at about 363 nm. We investigate the effect of flow rate of V/III gas sources at 1040 C for 45 minutes
Keywords :
III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; (0001) sapphire substrate; 1040 C; 363 nm; CVPE growth; GaN; X-ray diffraction; chlorine vapor phase epitaxy; gallium nitride film; photoluminescence; Epitaxial growth; Gallium nitride; Gases; III-V semiconductor materials; Inductors; Nitrogen; Semiconductor films; Substrates; Temperature; X-ray scattering;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616530
